DocumentCode
1232275
Title
GaInAs metal/semiconductor/metal photodetectors with Fe:InP barrier layers grown by chemical beam epitaxy
Author
Yang, Lei ; Sudbo, A.S. ; Tsang, W.T.
Author_Institution
AT&T Bell Labs., Murray Hill, NJ, USA
Volume
25
Issue
22
fYear
1989
Firstpage
1479
Lastpage
1481
Abstract
A GaInAs metal/semiconductor/metal (MSM) photodetector with a dark current less than 1 mu A is described. An Fe-doped InP layer was introduced between the metal and the GaInAs absorbing layer to improve the Schottky barrier height. A breakdown voltage of 30 V was achieved. A DC quantum efficiency of 64% and an impulse response, 1/e fall time of 190 ps were measured for a 20 mu m*100 mu m device. The layer structure is very attractive for integration with high-performance GaInAs/InP FETs.
Keywords
III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; indium compounds; iron; metal-semiconductor-metal structures; photodetectors; semiconductor epitaxial layers; semiconductor growth; 30 V; 64 percent; DC quantum efficiency; GaInAs-InP:Fe; Schottky barrier height; breakdown voltage; chemical beam epitaxy; dark current; impulse response; metal/semiconductor/metal photodetectors;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19890992
Filename
35145
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