DocumentCode
1232352
Title
Proposal of GaAs stacked DCFL circuit
Author
Shimizu, Shogo ; Koide, Noriaki
Author_Institution
R&D Center, Toshiba Corp., Kawasaki, Japan
Volume
25
Issue
22
fYear
1989
Firstpage
1489
Lastpage
1491
Abstract
The proposed stacked GaAs DCFL circuit structure can not only equalise a power supply voltage value (3-5 V) used in Si ICs, but can also reduce circuit current (30-50%) due to current sharing within a stacked circuit. A divide by 128/129 and 64/65 prescalar IC has been fabricated to confirm this concept.
Keywords
III-V semiconductors; field effect integrated circuits; gallium arsenide; integrated logic circuits; GaAs; circuit current; current sharing; dividers; power supply voltage value; prescalar IC; stacked DCFL circuit;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19890999
Filename
35152
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