DocumentCode
1232662
Title
GRIN-SCH AlGaInAs/InP quantum-well lasers emitting at 1300 nm
Author
Ash, R.M. ; Robbins, D.J. ; Thompson, John
Author_Institution
Plessey Res. Ltd., Towcester, UK
Volume
25
Issue
22
fYear
1989
Firstpage
1530
Lastpage
1531
Abstract
Buried-ridge GRIN-SCH quantum-well lasers operating at 1.3 mu m with an AlGaInAs continuously graded separate-confinement region and with AlGaInAs quantum wells have been demonstrated with CW threshold currents of 65 mA.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; optical communication equipment; semiconductor junction lasers; semiconductor quantum wells; 1300 nm; 65 mA; AlGaInAs-InP; CW threshold currents; GRIN-SCH quantum-well lasers; MQW; buried ridge lasers; continuously graded separate-confinement region; quantum wells;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19891029
Filename
35181
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