Ultrathin body SiGe-on-insulator pMOSFETs with high-mobility SiGe surface channels

Author

Tezuka, Tsutomu ; Sugiyama, Naoharu ; Mizuno, Tomohisa ; Takagi, Shin-ichi

Author_Institution

Adv. LSI Technol. Lab., Toshiba Corp., Kawasaki, Japan

Volume

50

Issue

5

fYear

2003

fDate

5/1/2003 12:00:00 AM

Firstpage

1328

Lastpage

1333

Abstract

A novel concept and a fabrication technique of strained SiGe-on-insulator (SGOI) pMOSFET are proposed and demonstrated. This device has an ultrathin strained SiGe channel layer, which is directly sandwiched by gate oxide and buried oxide layers. The mobility enhancement of 2.3 times higher than the universal mobility of conventional universal Si pMOSFETs was obtained for a pMOSFET with 19-nm-thick Si_0.58Ge_0.42 channel layer, which is formed by high-temperature oxidation of a Si_0.9Ge_0.1 layer grown on a Si-on-insulator (SOI) substrate. A fully depleted SGOI MOSFET with this simple single-layer body structure is promising for scaled SOI p-MOSFET with high current drive.

Keywords

Ge-Si alloys; MOSFET; carrier mobility; oxidation; semiconductor materials; 19 nm; SGOI; Si_0.58Ge_0.42; buried oxide layers; current drive; gate oxide; high-mobility SiGe surface channels; high-temperature oxidation; mobility enhancement; pMOSFETs; single-layer body structure; CMOS technology; Capacitance; Fabrication; Germanium silicon alloys; Insulation; MOSFET circuits; Oxidation; Silicon germanium; Silicon on insulator technology; Substrates;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2003.813249

Filename

1210787