DocumentCode
1234251
Title
High-density MIM capacitors using AlTaOx dielectrics
Author
Yang, M.Y. ; Huang, C.H. ; Chin, A. ; Chunxiang Zhu ; Li, M.F. ; Dim-Lee Kwong
Author_Institution
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume
24
Issue
5
fYear
2003
fDate
5/1/2003 12:00:00 AM
Firstpage
306
Lastpage
308
Abstract
The authors have obtained good MIM capacitor integrity of high-capacitance density of 10 fF/μm2 using high-/spl kappa/ AlTaO/sub x/ fabricated at 400/spl deg/C. In addition, small voltage dependence of capacitance of <600 ppm (quadratic voltage coefficient of only 130 ppm/V2) is obtained at 1 GHz using their mathematical derivation from measured high-frequency S parameters. These good results ensure the high-/spl kappa/ AlTaO/sub x/ MIM capacitor technology is useful for high-precision circuits operated at the RF frequency regime.
Keywords
MIM devices; S-parameters; aluminium compounds; capacitors; dielectric thin films; radiofrequency integrated circuits; 1 GHz; 400 degC; AlTaO; AlTaO/sub x/ dielectrics; RF frequency regime; high-/spl kappa/ AlTaO/sub x/; high-capacitance density; high-density MIM capacitors; high-frequency S parameters; high-precision circuits; Capacitance; Circuits; Dielectric measurements; Electrodes; Leakage current; MIM capacitors; Radio frequency; Temperature measurement; Transmission line measurements; Voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2003.812572
Filename
1210834
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