Novel method for calculating the noise figure of microwave MESFET mixers

Author

Dreifuss, J. ; Madjar, A. ; Bar-lev, A.

Author_Institution

Gov. of Israel, Haifa, Israel

Volume

136

Issue

4

fYear

1989

fDate

8/1/1989 12:00:00 AM

Firstpage

289

Lastpage

292

Abstract

A new computer analysis method is presented by which the noise contributions of the various noise sources within a MESFET mixer can be determined and its overall single sideband and double sideband noise figure and noise temperature calculated. The method extends Kerr´s work on diode type mixers and utilises a frequency conversion matrix of a MESFET mixer. The simulation program was run for a mixer circuit based on an NEC720 transistor, and the results for the noise sources and noise figure behaviour as functions of the LO power are presented and compared to measured values with good agreement. An optimal operating point from the standpoint of minimum noise figure can thus be determined for transistor biasing conditions and the LO input power.

Keywords

Schottky gate field effect transistors; circuit analysis computing; electron device noise; field effect transistor circuits; mixers (circuits); solid-state microwave circuits; LO power; NEC720 transistor; computer analysis method; double sideband noise figure; frequency conversion matrix; microwave MESFET mixers; noise figure; noise temperature; optimal operating point; simulation program; single sideband noise figure; transistor biasing conditions;

fLanguage

English

Journal_Title

Microwaves, Antennas and Propagation, IEE Proceedings H

Publisher

iet

ISSN

0950-107X

Type

jour

Filename

35462