• DocumentCode
    1235156
  • Title

    Effect of fluoride plasma treatment on InAlN/GaN HEMTs

  • Author

    Medjdoub, F. ; Alomari, M. ; Carlin, J.-F. ; Gonschorek, M. ; Feltin, E. ; Py, M.A. ; Gaquière, C. ; Grandjean, N. ; Kohn, E.

  • Author_Institution
    Inst. of Electron Devices & Circuits, Univ. of Ulm, Ulm
  • Volume
    44
  • Issue
    11
  • fYear
    2008
  • Firstpage
    696
  • Lastpage
    698
  • Abstract
    Fluoride plasma treatment similar to that used in AlGaN/GaN HEMTs has been applied to InAlN/GaN HEMTs. Enhancement mode of operation is obtained with a pinch-off voltage shifted by 3 V. Owing to the fluoride treatment an increase of the forward gate threshold to 3.5 V is observed. The small-signal performances are essentially unchanged. The thermal stability of this process has been assessed for the first time and appears to be limited to approximately 500degC.
  • Keywords
    aluminium compounds; high electron mobility transistors; thermal stability; HEMT; InAlN-GaN; fluoride plasma treatment; pinch-off voltage; thermal stability;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20080864
  • Filename
    4531526
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1235156