• DocumentCode
    1236106
  • Title

    The detection of defects in a niobium tri-layer process

  • Author

    Joseph, Arun A. ; Heuvelmans, Sander ; Gerritsma, Gerrit J. ; Kerkhoff, Hans G.

  • Author_Institution
    Testable Design & Testing of Microsystems Group, Univ. of Twente, Enschede, Netherlands
  • Volume
    13
  • Issue
    2
  • fYear
    2003
  • fDate
    6/1/2003 12:00:00 AM
  • Firstpage
    95
  • Lastpage
    98
  • Abstract
    Niobium (Nb) LTS processes are emerging as the technology for future ultra high-speed systems especially in the digital domain. As the number of Josephson Junctions (JJ) per chip has recently increased to around 90000, the quality of the process has to be assured so as to realize these complex circuits. Until now, very little or no information is available in the literature on how to achieve this. In this paper we present an approach and results of a study conducted on an RSFQ process. Measurements and SEM inspection were carried out on sample chips and a list of possible defects has been identified and described in detail. We have also developed test-structures for detection of the top-ranking defects, which will be used for yield analysis and the determination of the probability distribution of faults in the process. A test chip has been designed, based on the results of this study, and certain types of defects were introduced in the design to study the behavior of faulty junctions and interconnections.
  • Keywords
    Josephson effect; inspection; integrated circuit technology; integrated circuit testing; integrated circuit yield; niobium; scanning electron microscopy; superconducting device testing; superconducting integrated circuits; Josephson junctions; Nb; Nb tri-layer process; RSFQ circuit testing; RSFQ process; SEM inspection; defect detection; defect-based testing; fault probability distribution; test-structures; yield analysis; Circuit faults; Circuit testing; Electronics industry; Fault detection; Inspection; Josephson junctions; Manufacturing processes; Niobium; Probability distribution; Semiconductor device measurement;
  • fLanguage
    English
  • Journal_Title
    Applied Superconductivity, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1051-8223
  • Type

    jour

  • DOI
    10.1109/TASC.2003.813654
  • Filename
    1211550