Switching operation in OMVPE grown GaInAs/InP MQW intersectional optical switch structures

Author

Kikugawa, T. ; Ravikumar, K.G. ; Shimomura, K. ; Izumi, A. ; Matsubara, K. ; Miyamoto, Y. ; Arai, Shigehisa ; Suematsu, Y.

Author_Institution

Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan

Volume

1

Issue

6

fYear

1989

fDate

6/1/1989 12:00:00 AM

Firstpage

126

Lastpage

128

Abstract

An intersectional optical switch structure with an intersecting angle of 6 degrees was fabricated on an organometallic vapor-phase epitaxy (OMVPE) grown GaInAs/InP multiple quantum-well (MQW) layered wafer. Switching operation using field-induced refractive index variation was successfully demonstrated at the reverse bias voltage of 8 V for the 1.6 mu m wavelength region. Based on this switching, the field-induced refractive index variation in the QW was estimated as around 1%.<>

Keywords

III-V semiconductors; electro-optical devices; gallium arsenide; indium compounds; integrated optics; optical switches; semiconductor growth; semiconductor quantum wells; semiconductor switches; vapour phase epitaxial growth; 1.6 micron; 8 V; GaInAs-InP; OMVPE; field-induced refractive index variation; intersectional optical switch structures; multiple quantum-well layered wafer; organometallic vapor-phase epitaxy; reverse bias voltage; semiconductor; switching; switching operation; Ambient intelligence; Doping; Hydrogen; Indium phosphide; Optical device fabrication; Optical modulation; Optical switches; Quantum well devices; Refractive index; Voltage;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.36010

Filename

36010