VECSEL threshold and output power-shutoff dependence on the carrier recombination rates

Author

Zakharian, A.R. ; Hader, J. ; Moloney, J.V. ; Koch, S.W.

Author_Institution

Opt. Sci. Center, Univ. of Arizona, Tucson, AZ, USA

Volume

17

Issue

12

fYear

2005

Firstpage

2511

Lastpage

2513

Abstract

We compute the lasing threshold and thermally driven power-shutoff characteristics of optically pumped vertical-external-cavity surface-emitting lasers. Using a quantitative numerical model, variations in the threshold and shutoff power levels are contrasted for the two approaches to the computation of the carrier recombination rates: using the AN+BN²+CN³ model with the temperature and carrier density independent coefficients, versus using recombination rates precomputed within the framework of the microscopic many-body theory.

Keywords

microcavity lasers; optical pumping; semiconductor device models; semiconductor lasers; surface emitting lasers; thermo-optical effects; VECSEl threshold; carrier density independent coefficients; carrier recombination rates; lasing threshold; microscopic many-body theory; optically pumped laser; output power-shutoff dependence; semiconductor microcavity; shutoff power levels; temperature independent coefficients; thermally driven power-shutoff; vertical-external-cavity surface-emitting lasers; Laser excitation; Laser modes; Numerical models; Optical computing; Optical pumping; Power lasers; Pump lasers; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers; Auger recombination; optically pumped laser; semiconductor microcavity; vertical-external-cavity surface-emitting laser (VECSEL);

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2005.858087

Filename

1542132