Improvement in light-output efficiency of AlGaInP LEDs fabricated on stripe patterned epitaxy

Author

Lee, Y.J. ; Tseng, H.C. ; Kuo, H.C. ; Wang, S.C. ; Chang, C.W. ; Hsu, T.C. ; Yang, Y.L. ; Hsieh, M.H. ; Jou, M.J. ; Lee, B.J.

Author_Institution

Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

17

Issue

12

fYear

2005

Firstpage

2532

Lastpage

2534

Abstract

Quaternary AlGaInP light-emitting diodes (LEDs) operating at a wavelength of 630 nm with a stripe-patterned omni-directional reflector (ODR) were fabricated. It is demonstrated that the geometrical shape of stripe-patterned structure improves the light extraction efficiency by increasing the extraction of guided light. The optical and electrical characteristics of stripe-patterned ODR LEDs are presented and compared to typical ODR and distributed Bragg reflector (DBR) LEDs with the same epitaxial structure and emitting wavelength. It is shown that the output power of the stripe-patterned ODR LED exceeds that of the typical ODR and DBR LEDs by a factor of 1.15 and 2 times, respectively, and with an acceptable forward voltage of about 2.2 V.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; integrated optics; integrated optoelectronics; light emitting diodes; mirrors; semiconductor epitaxial layers; 2.2 V; 630 nm; AlGaInP; AlGaInP LED; LED fabrication; guided light extraction; light extraction efficiency; light-output efficiency; omnidirectional reflector; quaternary light-emitting diodes; stripe patterned epitaxy; Distributed Bragg reflectors; Electric variables; Epitaxial growth; Gallium arsenide; Geometrical optics; Light emitting diodes; Power generation; Shape control; Stimulated emission; Substrates; AlGaInP; light-emitting diode (LED); omni-directional reflector (ODR);

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2005.859147

Filename

1542139