Measurement of the barrier height of a multiple quantum barrier (MQB)

Author

Rennie, John ; Okajima, Masaki ; Itaya, Kazuhiko ; Hatakoshi, Gen-ichi

Author_Institution

Res. & Dev. Center, Toshiba Corp., Kawasaki, Japan

Volume

30

Issue

12

fYear

1994

fDate

12/1/1994 12:00:00 AM

Firstpage

2781

Lastpage

2789

Abstract

A method of using a light-emitting diode structure with two active regions to measure the excess barrier height induced by the inclusion of a multiple quantum barrier structure is outlined. For a multiple quantum barrier structure previously used in a visible laser device, the resultant increase in barrier height was found to be 26 meV. The effect of the first barrier thickness on the produced barrier height is also investigated. It was found that by optimizing this parameter, the induced barrier height could be increased to 55 meV. These results are compared with those predicted by theory, and certain discrepancies between them are discussed

Keywords

light emitting diodes; optical testing; optimisation; semiconductor device testing; semiconductor quantum wells; 26 meV; 55 meV; MQB; active regions; barrier height; barrier height measurement; light-emitting diode structure; multiple quantum barrier; visible laser device; Diode lasers; Electrons; Gallium arsenide; Helium; Laser theory; Light emitting diodes; Semiconductor laser arrays; Semiconductor lasers; Temperature; Voltage;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.362732

Filename

362732