High-speed Modulation of InGaAs: Sb-GaAs-GaAsP quantum-well vertical-cavity surface-emitting lasers with 1.27-μm emission wavelength

Author

Kuo, H.C. ; Chang, Y.H. ; Yao, H.H. ; Chang, Y.A. ; Lai, F.-I. ; Tsai, M.Y. ; Wang, S.C.

Author_Institution

Inst. of Electro-opt. Eng., Nat. Chiao-Tung Univ., Hsin-Tsu, Taiwan

Volume

17

Issue

3

fYear

2005

fDate

3/1/2005 12:00:00 AM

Firstpage

528

Lastpage

530

Abstract

1.27-μm InGaAs: Sb-GaAs-GaAsP vertical-cavity surface-emitting lasers (VCSELs) were grown by metal-organic chemical vapor deposition and exhibited excellent performance and temperature stability. The threshold current changes from 1.8 to 1.1 mA and the slope efficiency falls less than /spl sim/35% as the temperature raised from room temperature to 70/spl deg/C. With a bias current of only 5 mA, the 3-dB modulation frequency response was measured to be 8.36 GHz, which is appropriate for 10-Gb/s operation. The maximal bandwidth is measured to be 10.7 GHz with modulation current efficiency factor (MCEF) of /spl sim/5.25 GHz/(mA)¹2/. These VCSELs also demonstrate high-speed modulation up to 10 Gb/s from 25/spl deg/C to 70/spl deg/C.

Keywords

III-V semiconductors; MOCVD; antimony; gallium arsenide; gallium compounds; high-speed optical techniques; indium compounds; infrared sources; laser cavity resonators; laser stability; optical fibre communication; optical modulation; quantum well lasers; semiconductor growth; surface emitting lasers; 1.27 mum; 1.8 to 1.1 mA; 10 Gbit/s; 10.7 GHz; 20 to 70 degC; 5 mA; 8.36 GHz; GaAs-GaAsP-InGaAs:Sb; high-speed modulation; metal-organic chemical vapor deposition; modulation current efficiency factor; modulation frequency response; quantum well lasers; room temperature; temperature stability; vertical-cavity surface emitting lasers; Chemical lasers; Chemical vapor deposition; Current measurement; Indium gallium arsenide; Laser stability; Quantum well lasers; Surface emitting lasers; Surface waves; Temperature; Vertical cavity surface emitting lasers; Characterization; InGaAsSb; laser diodes; metal–organic chemical vapor deposition (MOCVD); optical fiber devices; semiconducting;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2004.840042

Filename

1396003