DocumentCode
1241250
Title
Epitaxial growth of multilayered YBa2Cu3O7-δ/Y0.7Ca0.3Ba2Cu3O7-δ films for high current application
Author
Lin, Y. ; Wu, Z. ; Chen, Xia ; Huang, D.X. ; Chen, X. ; Hor, P. ; Liu, S.W. ; Jacobson, A. ; Chen, C.L.
Author_Institution
Dept. of Phys., Univ. of Houston, TX, USA
Volume
13
Issue
2
fYear
2003
fDate
6/1/2003 12:00:00 AM
Firstpage
2825
Lastpage
2828
Abstract
Multilayered YBa2Cu3O7-δ (YBCO)/Y0.7Ca0.3Ba2Cu3O7-δ (YCBCO) films were epitaxially grown on [001] LaAlO3 and [001] SrTiO3 by using pulsed laser ablation. Constant-high critical current density (Jc) of 106 A/cm2 at 77 K has been achieved with the combination of multilayered YBCO and YCBCO layers for films with various thickness. The critical current density exhibits a high constant value for the multilayered structures indicating that the Jc in the superconductor films no longer decreases with the increase of the film thickness. The result verifies the model that interfaces can limit the density of dislocations that form in the film during the film growth. The artificial multilayered structures terminate the dislocations and the superconductive films at the optimal Jc conditions maintain a constant high Jc at various film thickness.
Keywords
barium compounds; calcium compounds; critical current density (superconductivity); dislocation density; high-temperature superconductors; pulsed laser deposition; superconducting epitaxial layers; superconducting superlattices; yttrium compounds; 77 K; LaAlO3; LaAlO3 [100] substrate; SrTiO3; SrTiO3 [100] substrate; YBCO/YCBCO multilayered film; YBa2Cu3O7-Y0.7Ca0.3Ba2Cu3O7; critical current density; dislocation density; epitaxial growth; high temperature superconductor; pulsed laser ablation; Critical current density; Epitaxial growth; Fabrication; Jacobian matrices; Superconducting epitaxial layers; Superconducting films; Superconducting materials; Superconducting transition temperature; Superconductivity; Yttrium barium copper oxide;
fLanguage
English
Journal_Title
Applied Superconductivity, IEEE Transactions on
Publisher
ieee
ISSN
1051-8223
Type
jour
DOI
10.1109/TASC.2003.812020
Filename
1212209
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