Pulse-doped diamond p-channel metal semiconductor field-effect transistor

Author

Shiomi, H. ; Nishibayashi, Y. ; Toda, N. ; Shikata, S.-I.

Author_Institution

Itami Res. Labs., Sumitomo Electr. Ind. Ltd., Hyogo, Japan

Volume

16

Issue

1

fYear

1995

Firstpage

36

Lastpage

38

Abstract

A p-type diamond metal semiconductor field-effect transistor (MESFET) structure, utilizing a boron pulse-doped layer as the conducting channel, has been successfully fabricated. The pulse-doped structure consists of an undoped diamond buffer layer, a highly doped thin diamond active layer, and an undoped diamond cap layer grown by the microwave plasma assisted chemical vapor deposition method. It is shown that this field-effect transistor with a gate length of 4 μm and the gate width of 39 μm exhibits an extrinsic transconductance of 116 μS/mm with both pinch-off characteristics and current saturation.

Keywords

Schottky gate field effect transistors; boron; diamond; doping profiles; elemental semiconductors; plasma CVD; 116 muS/mm; 39 micron; 4 micron; B pulse-doped layer; C:B; chemical vapor deposition; conducting channel; diamond FET; field-effect transistor; highly doped thin diamond active layer; microwave plasma assisted CVD; p-channel MESFET; undoped diamond buffer layer; undoped diamond cap layer; Boron; Buffer layers; Chemical vapor deposition; FETs; Impurities; MESFETs; Plasma temperature; Scattering; Substrates; Transconductance;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.363207

Filename

363207