High emitter efficiency in InP/GaInAs HBT´s with ultra high base doping levels

Author

Betser, Y. ; Ritter, D.

Author_Institution

Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel

Volume

16

Issue

3

fYear

1995

fDate

3/1/1995 12:00:00 AM

Firstpage

97

Lastpage

99

Abstract

The emitter efficiency of InP/GaInAs heterojunction bipolar transistors is calculated taking into account bandgap narrowing in the base, quantum mechanical tunneling, and the exact doping profile in the base. It is found that the emitter efficiency is high and does not limit the current gain of practical devices, up to a base doping level of 1/spl times/10/sup 20/ cm/sup -3/, and up to 400/spl deg/K . It is shown that the base emitter junction saturation current can be controlled over two orders of magnitude by a proper small displacement of the doped layer in the base.<>

Keywords

III-V semiconductors; doping profiles; energy gap; gallium arsenide; heavily doped semiconductors; heterojunction bipolar transistors; indium compounds; semiconductor doping; tunnelling; 400 K; HBT; InP-GaInAs; bandgap narrowing; base emitter junction saturation current; current gain; doping profile; heterojunction bipolar transistors; high emitter efficiency; quantum mechanical tunneling; ultra high base doping levels; Displacement control; Doping profiles; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Indium phosphide; Neodymium; Photonic band gap; Quantum mechanics; Tunneling;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.363237

Filename

363237