• DocumentCode
    1242278
  • Title

    Photo-battery fabricated in silicon on sapphire CMOS

  • Author

    Marwick, M.A. ; Andreou, A.G.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Johns Hopkins Univ., Baltimore, MD
  • Volume
    44
  • Issue
    12
  • fYear
    2008
  • Firstpage
    766
  • Lastpage
    767
  • Abstract
    A report is presented on the design and characterisation of an energy harvesting circuit fabricated in silicon on sapphire CMOS technology. The insulating sapphire substrate permits the connection of multiple photodiodes in series to obtain a higher output voltage, and its optical transparency allows for backside illumination. The conversion efficiency of the photo-battery is measured at greater than 1% for wavelengths ranging from infrared to ultraviolet. An active silicon area of 1 cm2 at 50001x ambient illumination yields approximately 60 muW of power.
  • Keywords
    CMOS integrated circuits; elemental semiconductors; integrated circuit design; integrated optoelectronics; photodiodes; photoelectric cells; sapphire; silicon; Si-Al2O3; ambient illumination; backside illumination; conversion efficiency measurement; energy harvesting circuit characterisation; multiple photodiodes connection; optical transparency; photo-battery fabrication; photocells; power 60 muW; silicon on sapphire CMOS;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20080374
  • Filename
    4539028
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1242278