Frequency normalization of constant power contours for MESFETs

The constant power contours have been measured on MESFETs with different doping profiles over the frequency range 8-16 GHz for a fixed input power level at different bias points. At each frequency, the contours are normalized with respect to the load for maximum power output; within experimental accuracy, the normalization holds fairly well, independent of frequency under certain limits. The concept is an extension of small-signal mismatch circles. In case of large-signal applications, the mismatch contours are no longer circles, because of the way the saturation current and breakdown voltage limits are attained. The contours present some reflection coefficient loci with respect to a given load