Novel design of AlGaInAs-InP lasers operating at 1.3 μm

Author

Kazarinov, R.F. ; Belenky, G.L.

Author_Institution

AT&T Bell Labs., Murray Hill, NJ, USA

Volume

31

Issue

3

fYear

1995

fDate

3/1/1995 12:00:00 AM

Firstpage

423

Lastpage

426

Abstract

A novel design of AlGaInAs-InP lasers operating at 1.3 μm is proposed. A distinctive attribute of the proposed design is that the AlInGaAs active region is surrounded by an AlInAs electron stopper layer on the p-side and an InP hole stopper layer on the n-side. The stopper layers do not impede the carrier injection into the active region and at the same time reduce the thermionic emission of carriers out of the active region. Utilization of stopper layers allows one to increase the value of internal quantum efficiency and to select the waveguide material corresponding to the optimum optical confinement factor value

Keywords

III-V semiconductors; aluminium compounds; electron mobility; gallium arsenide; gallium compounds; indium compounds; infrared sources; optical design techniques; quantum well lasers; thermionic electron emission; 1.3 mum; AlGaInAs-InP; AlGaInAs-InP lasers; AlInAs electron stopper layer; AlInGaAs active region; InP hole stopper layer; carrier injection; internal quantum efficiency; n-side; novel design; optimum optical confinement factor value; p-side; thermionic emission; waveguide material; Charge carrier processes; Electron optics; Indium phosphide; Optical design; Optical materials; Optical refraction; Optical variables control; Optical waveguides; Quantum well lasers; Waveguide lasers;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.364396

Filename

364396