DocumentCode
1245147
Title
Nonstationary response of MSM photodetectors
Author
Gvozdic, Dejan M. ; Radunovic, J.B.
Author_Institution
Fac. of Electr. Eng., Belgrade Univ.
Volume
43
Issue
2
fYear
1996
fDate
2/1/1996 12:00:00 AM
Firstpage
370
Lastpage
372
Abstract
This paper analyses the influence of nonstationary effects on carrier transport in a Metal-Semiconductor-Metal Photodetector (MSM-PD) made of a two-valley semiconductor. A phenomenological model is used for 2D numerical simulation of carrier transport and intervalley transfer. The complete analysis of the time and frequency response of the MSM-PD has been made for various micron and submicron structures, bias voltages and incident light wavelengths
Keywords
many-valley semiconductors; metal-semiconductor-metal structures; photodetectors; semiconductor device models; 2D numerical simulation; MSM photodetector; carrier transport; intervalley transfer; metal-semiconductor-metal photodetector; nonstationary response; two-valley semiconductor; Charge carrier processes; Electrodes; Equations; Fingers; Gallium arsenide; Hydrodynamics; Numerical simulation; Photodetectors; Substrates; Time factors;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.481745
Filename
481745
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