DocumentCode
1245195
Title
Effect of induced gate noise at zero drain bias in field-effect transistors
Author
Jindal, R.P.
Author_Institution
Dept. of Electr. & Comput. Eng., Southwestern Louisiana Univ., Lafayette, LA, USA
Volume
52
Issue
3
fYear
2005
fDate
3/1/2005 12:00:00 AM
Firstpage
432
Lastpage
434
Abstract
According to classical theories, a MOS transistor with zero source-to-drain voltage behaves like a passive resistor exhibiting channel thermal noise and the effect of induced gate noise vanishes. Here, we show that the effect of induced gate noise persists as conductance fluctuations even under these "equilibrium" conditions without disturbing the Nyquist relationship governing the channel thermal noise.
Keywords
MOSFET; field effect transistors; semiconductor device noise; thermal noise; MOS transistor; Nyquist relationship; channel thermal noise; conductance fluctuations; excess equilibrium noise; field effect transistors; induced gate noise; passive resistor; zero drain bias; zero source-to-drain voltage; Active noise reduction; Contact resistance; FETs; Fluctuations; JFETs; MOSFET circuits; Resistors; Surface resistance; Thermal resistance; Voltage; Excess equilibrium noise; MOSFET; induced gate noise;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2005.843891
Filename
1397996
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