• DocumentCode
    1245457
  • Title

    Multi-λ ridge waveguide gain-coupled DFB laser array

  • Author

    Li, G.P. ; Makino, T. ; Wu, C.-M.

  • Author_Institution
    Bell-Northern Res., Ottawa, Ont., Canada
  • Volume
    13
  • Issue
    2
  • fYear
    1995
  • fDate
    2/1/1995 12:00:00 AM
  • Firstpage
    196
  • Lastpage
    199
  • Abstract
    Multi-wavelength gain-coupled quantum well DFB laser array has been fabricated on an InP substrate by simply varying the ridge waveguide width of the element lasers. Owing to the gain-coupling effect, seven singlemode lasing wavelengths around 1.55 μm with ~2 nm spacing were obtained simultaneously. The lasers had low threshold currents and small beam divergence
  • Keywords
    III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; laser beams; laser modes; quantum well lasers; semiconductor laser arrays; waveguide lasers; 1.55 mum; InGaAsP-InP; InP; InP substrate; gain-coupling effect; low threshold currents; multi-λ ridge waveguide gain-coupled DFB laser array; quantum well DFB laser array; ridge waveguide width; singlemode lasing wavelengths; small beam divergence; Chemical lasers; Distributed feedback devices; Holographic optical components; Optical arrays; Optical waveguides; Quantum well lasers; Threshold current; Waveguide lasers; Wavelength division multiplexing; Wet etching;
  • fLanguage
    English
  • Journal_Title
    Lightwave Technology, Journal of
  • Publisher
    ieee
  • ISSN
    0733-8724
  • Type

    jour

  • DOI
    10.1109/50.365206
  • Filename
    365206