Class-A SiGe HBT power amplifiers at C-band frequencies

Author

Erben, U. ; Wahl, M. ; Schuppen, A. ; Schumacher, H.

Author_Institution

Dept. of Electron. Devices & Circuits, Ulm Univ., Germany

Volume

5

Issue

12

fYear

1995

Firstpage

435

Lastpage

436

Abstract

We report on the first experimental investigations of the power-handling capabilities of SiGe heterojunction bipolar transistors (HBT´s) at C-band frequencies. Multifinger HBT´s in common-emitter (CE) and common-base (CB) configuration were matched using high Q matching networks. At a frequency of 5.7 GHz the CE and the CB class A amplifier exhibit a 1-dB compression output power of 18 and 20 dBm, respectively. A power-added efficiency (PAE) of more than 30% and a output power density of 1 mW/μm² at 4 V V/sub CB/ were observed.

Keywords

Ge-Si alloys; bipolar transistor circuits; heterojunction bipolar transistors; microwave bipolar transistors; microwave power amplifiers; power bipolar transistors; semiconductor materials; 30 percent; 5.7 GHz; C-band; SiGe; class-A SiGe HBT power amplifiers; common-base configuration; common-emitter configuration; compression output power; heterojunction bipolar transistors; high Q matching networks; multifinger HBTs; output power density; power-added efficiency; Bipolar transistors; Breakdown voltage; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Power amplifiers; Power generation; Radiofrequency amplifiers; Silicon germanium; Thermal conductivity;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.481852

Filename

481852