High-efficiency GaInP/GaAs HBT MMIC power amplifier with up to 9 W output power at 10 GHz

Author

Riepe, K. ; Leier, H. ; Seiler, U. ; Marten, A. ; Sledzik, H.

Author_Institution

Res. Center, Daimler-Benz AG, Ulm, Germany

Volume

6

Issue

1

fYear

1996

Firstpage

22

Lastpage

24

Abstract

Monolithic power amplifiers using adequately ballasted high-efficiency GaInP/GaAs heterojunction bipolar transistors (HBT´s) have been designed, fabricated, and tested. A maximum output power of 9 W with a power-added efficiency (PAE) of 42% and peak power-added efficiencies of 45% have been achieved at 10 GHz under critical long pulse conditions (pulse width=100 μs, duty cycle=10%). To our knowledge these results represent the best performance of any GaInP/GaAs HBT MMIC power amplifier considering efficiency, output power, operation frequency, and pulse conditions.

Keywords

III-V semiconductors; MMIC power amplifiers; bipolar MMIC; gallium arsenide; gallium compounds; indium compounds; microwave power amplifiers; 10 GHz; 42 percent; 45 percent; 9 W; GaInP-GaAs; GaInP/GaAs HBT MMIC power amplifier; X-band amplifier; ballasted high-efficiency GaInP/GaAs HBT; critical long pulse conditions; duty cycle; fabrication; operation frequency; output power; peak power-added efficiencies; power-added efficiency; pulse width; Electronic ballasts; Gallium arsenide; Heterojunction bipolar transistors; High power amplifiers; MMICs; Power amplifiers; Power generation; Pulse amplifiers; Space vector pulse width modulation; Testing;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.482059

Filename

482059