Model verification for a high-power-efficiency AlGaAs-GaAs HBT

Author

Deshours, Frederique ; Bergeault, E. ; Berghoff, G. ; Pinatel, C. ; Dubon-Chevallier, C.

Author_Institution

Dept. Commun., ENST, Paris, France

Volume

6

Issue

1

fYear

1996

Firstpage

31

Lastpage

33

Abstract

Heterojunction bipolar transistors (HBT´s) with 2700 μm² of emitter area are characterized for model verification using an active load-pull measurement system. The simulation and measurement results (up to 26 dBm) are reported and compared in terms of output power level and power-added efficiency under variable operating conditions. These measurements are performed with the aim of designing power amplifiers for mobile communications.

Keywords

III-V semiconductors; UHF bipolar transistors; UHF measurement; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; microwave bipolar transistors; microwave measurement; microwave power transistors; power bipolar transistors; semiconductor device models; semiconductor device testing; AlGaAs-GaAs; SHF; UHF; active load-pull measurement system; heterojunction bipolar transistors; high-power-efficiency HBT; model verification; simulation; Attenuators; Heterojunction bipolar transistors; Impedance measurement; Low pass filters; Microwave measurements; Performance evaluation; Power amplifiers; Power generation; Power measurement; Power system modeling;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.482062

Filename

482062