Modeling hysteresis phenomena in nanotube field-effect transistors

Author

Robert-Peillard, Arnaud ; Rotkin, Slava V.

Author_Institution

Beckman Inst. for Adv. Sci. & Technol., Univ. of Illinois, Urbana, IL, USA

Volume

4

Issue

2

fYear

2005

fDate

3/1/2005 12:00:00 AM

Firstpage

284

Lastpage

288

Abstract

A model is developed to explain a hysteresis observed experimentally in nanotube field-effect transistors. The model explains the hysteresis through trapping of electrons in an oxide layer. The Fowler-Nordheim tunneling mechanism is held responsible for the electron injection. The influence of different parameters such as the sweeping rate or the range of the gate voltage on the hysteresis is studied and compared with experimental results.

Keywords

carbon nanotubes; electron traps; field effect transistors; hysteresis; nanotube devices; semiconductor device models; tunnelling; C; Fowler-Nordheim tunneling mechanism; electron injection; electron trapping; modeling hysteresis; nanotube field effect transistors; oxide layer; sweeping rate; Electron traps; FETs; Geometry; Hysteresis; MOSFETs; Nanotechnology; Nonvolatile memory; Temperature dependence; Threshold voltage; Tunneling; Electrostatics of one-dimensional (1-D) systems; NT transistors; field-effect transistors (FETs); hysteresis; nanotechnology; nanotube (NT) nonvolatile memory; tunneling;

fLanguage

English

Journal_Title

Nanotechnology, IEEE Transactions on

Publisher

ieee

ISSN

1536-125X

Type

jour

DOI

10.1109/TNANO.2004.842053

Filename

1406007