DocumentCode
1247952
Title
New transverse-domain formation mechanism in a quarter-micrometre-gate HEMT
Author
Awano, Yuji
Author_Institution
Fujitsu Labs. Ltd., Atsugi
Volume
24
Issue
21
fYear
1988
fDate
10/13/1988 12:00:00 AM
Firstpage
1315
Lastpage
1317
Abstract
Studies a quarter-micrometre-gate HEMT by a two-dimensional Monte Carlo particle simulation to gain a deeper insight into the device operation. A new transverse-domain formation due to intervalley electron transfer is predicted. The effect of domain formation on device performance and current saturation characteristics is also discussed
Keywords
Monte Carlo methods; high electron mobility transistors; semiconductor device models; current saturation characteristics; device operation; device performance; domain formation; intervalley electron transfer; quarter-micrometre-gate HEMT; transverse-domain formation mechanism; two-dimensional Monte Carlo particle simulation;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
Filename
5894
Link To Document