• DocumentCode
    1248848
  • Title

    Subthreshold Characteristics of MOS Transistors With \\hbox {CeO}_{2}/\\hbox {La}_{2}\\hbox {O}_{3} Stacked Gate Dielectric

  • Author

    Wong, Hei ; Yang, B.L. ; Kakushima, K. ; Iwai, Hiroshi

  • Author_Institution
    Dept. of Electron. Eng., City Univ. of Hong Kong, Kowloon, China
  • Volume
    32
  • Issue
    8
  • fYear
    2011
  • Firstpage
    1002
  • Lastpage
    1004
  • Abstract
    This letter reports the subthreshold characteristics of MOS transistors with the novel CeO2/La2O3 stacked gate dielectric. We found that the top CeO2 capping layer does not only improve the bulk properties of La2O3 by reducing the oxygen vacancies as a result of the reduction reaction of CeO2 but also reduces the La2O3/Si interface trap pronouncedly. We further identify the energy level of the interface traps by conducting temperature-dependent subthreshold slope measurements.
  • Keywords
    MOSFET; cerium compounds; lanthanum compounds; CeO2-La2O3; La2O3-Si; MOS transistors; energy level; interface trap; oxygen reduction; oxygen vacancies reduction; stacked gate dielectric; subthreshold characteristics; temperature-dependent subthreshold slope measurements; Capacitance; Dielectrics; Logic gates; MOSFETs; Silicon; Temperature distribution; $hbox{La}_{2}hbox{O}_{3}$; High-$k$ gate dielectric; MOS; temperature dependence;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2011.2157799
  • Filename
    5898389
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1248848