DocumentCode
1250416
Title
Explanation and model for the logarithmic time dependence of p-MOSFET degradation
Author
Wang, Qin ; Brox, Martin ; Krautschneider, Wolfgang H. ; Weber, Werner
Author_Institution
Siemens AG, Munich, Germany
Volume
12
Issue
5
fYear
1991
fDate
5/1/1991 12:00:00 AM
Firstpage
218
Lastpage
220
Abstract
The degradation of p-MOS transistors is shown to proceed logarithmically in time. A simple, analytic degradation model is proposed that fully accounts for this observation. The logarithmic time dependence originates from the logarithmic growth of a region of filled traps from the drain junction towards the source. On this basis, a reliable lifetime extrapolation is performed.<>
Keywords
electron traps; insulated gate field effect transistors; reliability; semiconductor device models; analytic degradation model; drain junction; lifetime extrapolation; logarithmic time dependence; model; p-MOSFET degradation; region of filled traps; submicron p-MOSFETs; Current density; Degradation; Electron traps; Filling; Heating; Hot carriers; Interface states; MOSFET circuits; Power generation; Stress;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.79562
Filename
79562
Link To Document