Influence of InGaP and AlGaAs Schottky Layers on ESD Robustness in GaAs pHEMTs

Author

Chen, Shih-Hung ; Lin, Yueh-Chin ; Linten, Dimitri ; Scholz, Mirko ; Hellings, Geert ; Chang, Edward Yi ; Groeseneken, Guido

Author_Institution

IMEC, Leuven, Belgium

Volume

33

Issue

9

fYear

2012

Firstpage

1252

Lastpage

1254

Abstract

GaAs high-electron-mobility transistors (HEMTs) have been widely used for radio-frequency (RF) applications due to the excellent material properties. One of the essential elements of the HEMTs is the gate Schottky barrier layer. InGaP has been proposed and proven as a better Schottky barrier material for the RF performance of the GaAs HEMTs. This letter investigates the influence of the GaAs HEMTs with two different Schottky layers, which are InGaP and AlGaAs on device transient characteristics under electrostatic discharge (ESD) stress. Although InGaP presents significant advantages on improving RF performance of GaAs HEMTs, it shows inferiority in ESD robustness.

Keywords

III-V semiconductors; Schottky barriers; aluminium compounds; electrostatic discharge; gallium arsenide; gallium compounds; high electron mobility transistors; indium compounds; AlGaAs; ESD robustness; ESD stress; GaAs; InGaP; RF applications; Schottky barrier material; device transient characteristics; electrostatic discharge stress; gate Schottky barrier layer; high-electron-mobility transistors; material properties; pHEMT; radiofrequency applications; Electrostatic discharges; Gallium arsenide; Logic gates; PHEMTs; Schottky barriers; Schottky diodes; Stress; Electrostatic discharge (ESD); GaAs pseudomorphic high-electron-mobility transistor (pHEMT); InGaP Schottky layer; transmission-line pulsing (TLP) systems;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2204951

Filename

6248673