• DocumentCode
    1251424
  • Title

    GaAs FETs [microwave devices]

  • Author

    Nand, Nishant ; Gupta, Nikhil

  • Author_Institution
    Netaji Subhas Inst. of Technol., New Delhi, India
  • Volume
    20
  • Issue
    5
  • fYear
    2002
  • Firstpage
    35
  • Lastpage
    37
  • Abstract
    The field effect transistor (FET) at microwave frequencies using GaAs has been a cornerstone of research in solid state microwave devices for the past 30 years. It is an established item in the microwave systems of today in such applications as low noise amplifiers, mixers, oscillators, power amplifiers, switches and multipliers. Indeed, many microwave systems would not be possible at their present day performance levels if it were not for the GaAs FET
  • Keywords
    III-V semiconductors; gallium arsenide; microwave field effect transistors; semiconductor device models; FETs; GaAs; III V semiconductors; low noise amplifiers; microwave frequencies; mixers; multipliers; oscillators; power amplifiers; solid state microwave devices; switches; Availability; Doping; Electron mobility; Gallium arsenide; Impurities; MESFETs; Microwave FETs; Microwave frequencies; Schottky diodes; Switches;
  • fLanguage
    English
  • Journal_Title
    Potentials, IEEE
  • Publisher
    ieee
  • ISSN
    0278-6648
  • Type

    jour

  • DOI
    10.1109/45.983340
  • Filename
    983340
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1251424