Effect of silicon window polarity on partial-SOI LDMOSFETs

Author

Yue Hu ; Gaofeng Wang ; Sheng Chang ; Hao Wang ; Qijun Huang

Author_Institution

Sch. of Phys. Sci. & Technol., Wuhan Univ., Wuhan, China

Volume

7

Issue

7

fYear

2012

fDate

7/1/2012 12:00:00 AM

Firstpage

628

Lastpage

630

Abstract

The effect of silicon window polarity on partial-silicon-on-insulator (PSOI) lateral double-diffused MOSFETs (LDMOSFETs) under high-voltage operation is studied. Different polarities of the silicon window in PSOI LDMOSFETs are analysed to investigate their effects on electrical characteristics: breakdown voltage (BV) and on-resistance (R_on). In PSOI LDMOSFETs, the P-type silicon window is considered as a part of the substrate, whereas the N-type silicon window falls into the drift region, which affects the high-voltage operation of devices. The two-dimensional simulation results show that the BV of PSOI LDMOSFET with P-type window is higher than that of PSOI LDMOSFET with N-type window, whereas the R_on of PSOI LDMOSFET with P-type window is lower than that of PSOI LDMOSFET with N-type window.

Keywords

MOSFET; electric resistance; elemental semiconductors; high-voltage techniques; semiconductor device breakdown; silicon; silicon-on-insulator; Si; breakdown voltage; electrical characteristics; high-voltage operation; n-type silicon window polarity; on-resistance characteristic; partial-silicon-on-insulator lateral double-diffused MOSFETs;

fLanguage

English

Journal_Title

Micro & Nano Letters, IET

Publisher

iet

ISSN

1750-0443

Type

jour

DOI

10.1049/mnl.2012.0351

Filename

6250094