• DocumentCode
    1252302
  • Title

    Improving the wear resistance of NiTi shape memory alloy thin films by nitrogen and carbon ion implantation

  • Author

    Gorji, M.R. ; Sanjabi, S. ; Barber, Z.H.

  • Author_Institution
    Nanomater. group, Dept. of Mater. Eng., Tarbiat Modares Univ., Tehran, Iran
  • Volume
    7
  • Issue
    7
  • fYear
    2012
  • fDate
    7/1/2012 12:00:00 AM
  • Firstpage
    641
  • Lastpage
    645
  • Abstract
    Annealed NiTi thin films (~51.2~at.%Ni) were implanted with carbon and nitrogen ions with 80~keV energy and 3~1017 cm-2 ion dose. X-ray photoelectron spectroscopy confirmed the existence of implanted ions in the surface structure of the films. Atomic force microscopy showed an increase of roughness and decrease of grain size after ion implantation. Grazing incidence X-ray diffraction showed the formation of new phases in the films such as TiN, Ti2N, TiC and different kinds of oxides. Nanoindentation and nanoscratching tests revealed the improvement of wear behaviour of NiTi thin films after ion implantation via increasing nanohardness (3.1-6.2 and 7.3-GPa after carbon and nitrogen ion implantation, respectively) and decreasing of scratch coefficient (0.22-0.18 and 0.17 after carbon and nitrogen ion implantation) and wear depth.
  • Keywords
    X-ray diffraction; X-ray photoelectron spectra; annealing; atomic force microscopy; carbon; grain size; hardness; hardness testing; ion implantation; metallic thin films; nanoindentation; nickel alloys; nitrogen; shape memory effects; surface roughness; titanium alloys; wear resistance; NiTi:C; NiTi:N; X-ray photoelectron spectroscopy; annealing; atomic force microscopy; carbon ion implantation; electron volt energy 80 keV; grain size; grazing incidence X-ray diffraction; nanohardness; nanoindentation testing; nanoscratching testing; nitrogen ion implantation; shape memory alloy thin films; surface roughness; surface structure; wear resistance;
  • fLanguage
    English
  • Journal_Title
    Micro & Nano Letters, IET
  • Publisher
    iet
  • ISSN
    1750-0443
  • Type

    jour

  • DOI
    10.1049/mnl.2012.0299
  • Filename
    6250098