A design procedure for monolithic matrix amplifier

Author

Paoloni, Claudio ; DAgostino, S.

Author_Institution

Dept. of Electr. Eng., Tor Vergata Univ., Rome, Italy

Volume

45

Issue

1

fYear

1997

fDate

1/1/1997 12:00:00 AM

Firstpage

135

Lastpage

139

Abstract

A procedure for the design of monolithic matrix amplifier is proposed. A simplified expression for small signal gain based on unilateral field-effect transistor (FET) model is derived. In particular, the Design-Oriented FET model previously published is adopted. The introduction of a set of design charts allows the designer a fast and accurate prediction of low frequency gain and 3-dB cutoff frequency of a given matrix amplifier. Good agreement with experimental data and simulations confirms the validity of the proposed design method

Keywords

MMIC amplifiers; equivalent circuits; integrated circuit design; microwave amplifiers; network synthesis; wideband amplifiers; 3-dB cutoff frequency; Design-Oriented FET model; design charts; design procedure; field-effect transistor model; low frequency gain; monolithic matrix amplifier; small signal gain; unilateral FET model; Cutoff frequency; Design methodology; Distributed parameter circuits; Frequency response; Microwave FETs; Microwave integrated circuits; Predictive models; Process design; Transmission line matrix methods; Transmission line theory;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.552044

Filename

552044