DocumentCode
1253186
Title
Electromechanically Induced GHz Rate Optical Frequency Modulation in Silicon
Author
Tallur, S. ; Bhave, S.A.
Author_Institution
Department of Electrical and Computer Engineering, OxideMEMS Lab, Cornell University, Ithaca, NY, USA
Volume
4
Issue
5
fYear
2012
Firstpage
1474
Lastpage
1483
Abstract
We present a monolithic silicon acousto-optic frequency modulator (AOFM) operating at 1.09 GHz. Direct spectroscopy of the modulated laser power shows asymmetric sidebands, which indicate coincident amplitude modulation and frequency modulation (FM). Employing mechanical levers to enhance the displacement of the optical resonator resulted in greater than 67X improvement in the optomechanical FM factor over earlier reported numbers for silicon nanobeams.
Keywords
Amplitude modulation; Frequency modulation; Optical modulation; Optical resonators; Resonant frequency; Silicon optomechanics; optical frequency modulation (FM);
fLanguage
English
Journal_Title
Photonics Journal, IEEE
Publisher
ieee
ISSN
1943-0655
Type
jour
DOI
10.1109/JPHOT.2012.2210701
Filename
6251993
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