5-Gb/s performance of integrated light source consisting of λ/4-shifted DFB laser and EA modulator with SI InP BH structure

Author

Tanaka, Hideaki ; Suzuki, Masatoshi ; Usami, Masashi ; Taga, Hidenori ; Yamamoto, Shu ; Matsushima, Yuichi

Author_Institution

KDD Meguro Res. & Dev. Lab., Tokyo, Japan

Volume

8

Issue

9

fYear

1990

fDate

9/1/1990 12:00:00 AM

Firstpage

1357

Lastpage

1362

Abstract

The fabrication process and characteristics, including 5-Gb/s transmission, of an integrated light source consisting of a λ/4-shifted distributed feedback laser and an electroabsorption (EA) modulator are discussed. By introducing a semi-insulating (SI) InP on the butt-joint region, both the large electrical isolation resistance (>10 MΩ) between the laser and the modulator and a high optical coupling efficiency (>80%) between them are achieved. A typical threshold current was 50-70 mA, and single-mode operation at 1.576 μm was maintained up to 5.5-mW output power. The modulation voltage to swing between 90% transmission and 10% transmission was 6.2-12 V, depending on the modulator length in the range 1000-400 μm. The 3-dB bandwidth is 7.7 GHz and a linewidth enhancement factor (α) of 0.9 is estimated from the sideband-to-carrier ratio of the spectra

Keywords

distributed feedback lasers; electro-optical devices; integrated optoelectronics; light sources; optical communication equipment; optical modulation; semiconductor junction lasers; 1.576 micron; 5 Gbit/s; 5.5 mW; 50 to 70 mA; 6.2 to 12 V; 7.7 GHz; DFB laser; III-V semiconductors; butt-joint region; distributed feedback laser; electrical isolation resistance; electroabsorption modulator; fabrication process; integrated light source; linewidth enhancement factor; modulation voltage; optical coupling efficiency; semiinsulating InP curved heterostructure; sideband-to-carrier ratio; single-mode operation; threshold current; Distributed feedback devices; Electric resistance; Indium phosphide; Laser feedback; Light sources; Optical coupling; Optical device fabrication; Optical modulation; Power generation; Threshold current;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/50.59165

Filename

59165