Electromagnetic analysis for microwave FET modeling

Author

Larique, E. ; Mons, S. ; Baillargeat, D. ; Verdeyme, S. ; Aubourg, M. ; Guillon, P. ; Quere, R.

Author_Institution

IRCOM, Limoges Univ., France

Volume

8

Issue

1

fYear

1998

fDate

1/1/1998 12:00:00 AM

Firstpage

41

Lastpage

43

Abstract

This letter presents a technique to analyze complex microwave devices. An electromagnetic three-dimensional (3-D) software is applied to characterize the distributed part of the structure. It is coupled to a circuit simulator to introduce the contribution on the electrical response of the localized passive or active elements contained in the device. The link between the two parts is made thanks to a new type of access, “the localized access”. We have applied this method to the study of a field effect transistor and good agreements are observed between simulations and measurements from 1 to 30 GHz

Keywords

circuit analysis computing; field effect MMIC; finite element analysis; integrated circuit modelling; microwave field effect transistors; 1 to 30 GHz; 3D software; circuit simulator; electromagnetic analysis; finite element method; localized active elements; localized passive elements; microwave FET modeling; simulations; Circuit simulation; Coupling circuits; Electrodes; Electromagnetic analysis; Electromagnetic coupling; Electromagnetic measurements; Electromagnetic modeling; Microwave FETs; Microwave devices; Microwave theory and techniques;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.650983

Filename

650983