High-speed tunneling-barrier GaAs light emitters

Author

Van Hoof, C. ; Borghs, G.

Author_Institution

IMEC, Leuven, Belgium

Volume

10

Issue

1

fYear

1998

Firstpage

24

Lastpage

26

Abstract

High-speed GaAs light-emitting diodes are described that contain a single-AlAs tunneling barrier for localization of the carriers. These devices are identical to double-barrier resonant tunneling light emitters in speed and efficiency, but are not dependent on resonant tunneling of charge carriers. An external quantum efficiency of 0.18% and a 3-dB modulation bandwidth of 1.3 GHz are reported. These devices are less affected by nonradiative recombination compared to the conventional heavy-doping approach, in which a high-modulation bandwidth is obtained at the expense of a more than proportional reduction in quantum efficiency.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high-speed optical techniques; light emitting diodes; molecular beam epitaxial growth; optical communication equipment; optical modulation; resonant tunnelling diodes; 0.18 percent; 1.3 GHz; AlAs; GaAs; GaAs light emitters; GaAs-AlAs; carrier localization; charge carriers; double-barrier resonant tunneling light emitters; efficiency; external quantum efficiency; heavy-doping approach; high-modulation bandwidth; high-speed tunneling-barrier light barriers; light-emitting diodes; modulation bandwidth; nonradiative recombination; quantum efficiency; resonant tunneling; single-AlAs tunneling barrier; speed; Bandwidth; Gallium arsenide; High speed optical techniques; Light emitting diodes; Optical arrays; Optical buffering; Optical modulation; Resonant tunneling devices; Stimulated emission; Surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.651089

Filename

651089