• DocumentCode
    1254600
  • Title

    Compound interest

  • Author

    Snowden, Christopher M.

  • Volume
    48
  • Issue
    1
  • fYear
    2002
  • fDate
    1/1/2002 12:00:00 AM
  • Firstpage
    15
  • Lastpage
    20
  • Abstract
    Buoyant markets for mobile communications and optoelectronics have fuelled a growing demand for devices based on compound semiconductors. The author looks at the future prospects for these versatile materials
  • Keywords
    Ge-Si alloys; III-V semiconductors; Schottky gate field effect transistors; bipolar MMIC; field effect MMIC; heterojunction bipolar transistors; high electron mobility transistors; integrated optoelectronics; land mobile radio; light emitting diodes; semiconductor lasers; semiconductor technology; technological forecasting; AlGaAs; AlInGaP; GaAs; GaN; GaP; III-V semiconductors; InGaAs; InGaN; InP; MMIC; SiGe; compound semiconductors; device applications; digital applications; future prospects; laser diodes; light-emitting diodes; manufacturing; mobile communications; optoelectronics; versatile materials;
  • fLanguage
    English
  • Journal_Title
    IEE Review
  • Publisher
    iet
  • ISSN
    0953-5683
  • Type

    jour

  • DOI
    10.1049/ir:20020102
  • Filename
    986233