Ultrafast transport dynamics of p-i-n photodetectors under high-power illumination

Author

Sun, Chi-Kuang ; Tan, I-Hsing ; Bowers, John E.

Author_Institution

Graduate Inst. of Electro-Opt. Eng., Nat. Taiwan Univ., Taipei, Taiwan

Volume

10

Issue

1

fYear

1998

Firstpage

135

Lastpage

137

Abstract

We studied ultrafast transport dynamics of highspeed p-i-n photodetectors under high illumination using an electrooptic sampling technique. Under high illumination, saturation nonlinearities were found to be dominated by a space-charge-screening effect. A transient forward external current was also observed, which was attributed to an underdamped plasma oscillation. The external bias required to compensate these nonlinear effects increased with increased illumination.

Keywords

carrier mobility; high-speed optical techniques; nonlinear optics; optical communication equipment; photodetectors; shielding; electrooptic sampling; external bias; high illumination; high-power illumination; highspeed p-i-n photodetectors; nonlinear effects; p-i-n photodetectors; saturation nonlinearities; space-charge-screening effect; transient forward external current; ultrafast transport dynamics; underdamped plasma oscillation; Absorption; Current measurement; Electrooptic modulators; Electrooptical waveguides; Lighting; PIN photodiodes; Photodetectors; Pulse measurements; Sampling methods; Wavelength measurement;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.651137

Filename

651137