Low power transmitter experimental prototype and simulation for personal access communications system (PACS)

Author

Izadpanah, Hossein ; Malkemes, Robert C. ; Chukurov, Daniel D. ; Cordell, Robert R.

Author_Institution

Hughes Res. Labs., Malibu, CA, USA

Volume

44

Issue

6

fYear

1997

fDate

6/1/1997 12:00:00 AM

Firstpage

482

Lastpage

487

Abstract

In this paper, we look at the benefit of using InP semiconductor technology for RF power amplifiers to improve their overall linearity and efficiency. Experimental prototype and simulation results for a PACS subscriber unit (SU) transmitter RF power amplifier are presented. The role of power amplifier nonlinearity on the emission spectral spreading and the adjacent channel interfered power ratio (ACPR) variations is demonstrated for GaAs FET, GaAs HBT, and InP HBT technologies. A technique to improve the amplifier power added efficiency (PAE) and simultaneously reduce the battery consumption current is suggested and verified by simulation

Keywords

III-V semiconductors; UHF power amplifiers; heterojunction bipolar transistors; indium compounds; land mobile radio; personal communication networks; radio transmitters; GaAs; GaAs FET technology; GaAs HBT technology; InP; InP HBT technology; InP semiconductor technology; PACS subscriber unit; RF power amplifiers; adjacent channel interfered power ratio; amplifier nonlinearity; battery consumption current reduction; emission spectral spreading; linearity; low power transmitter prototype; personal access communications system; power added efficiency improvement; Gallium arsenide; Heterojunction bipolar transistors; Indium phosphide; Linearity; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Semiconductor optical amplifiers; Transmitters; Virtual prototyping;

fLanguage

English

Journal_Title

Circuits and Systems II: Analog and Digital Signal Processing, IEEE Transactions on

Publisher

ieee

ISSN

1057-7130

Type

jour

DOI

10.1109/82.592581

Filename

592581