• DocumentCode
    1255649
  • Title

    Temperature dependence of turn-on process in 4H-SiC thyristors

  • Author

    Dyakonova, Nina V. ; Levinshtein, M.E. ; Palmour, John W. ; Rumyantsev, S.L. ; Singh, Rajdeep

  • Author_Institution
    A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg
  • Volume
    33
  • Issue
    10
  • fYear
    1997
  • fDate
    5/8/1997 12:00:00 AM
  • Firstpage
    914
  • Lastpage
    915
  • Abstract
    The turn-on process in 4H-SiC thyristors with a forward blocking voltage Uh≃400 V has been investigated in the temperature range 160-500 K. The time constant of the current rise τ r decreases monotonically with temperature, increasing from τr≃63 ns at T=160 K to τr=1.9 ns at T=495 K
  • Keywords
    semiconductor materials; silicon compounds; thyristors; 160 to 500 K; 400 V; SiC; current rise; forward blocking voltage; thyristors; time constant; turn-on process;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19970563
  • Filename
    592658
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1255649