DocumentCode
1255699
Title
Design and Simulation of a MGy Radiation Tolerant Signal Conditioning Circuit for Resistive Sensors in 0.7
m CMOS
Author
Leroux, P. ; Sterckx, J. ; Verbeeck, J. ; Van Uffelen, M. ; Damiani, C.
Author_Institution
K. H. Kempen University College, Geel, Belgium
Volume
59
Issue
4
fYear
2012
Firstpage
1309
Lastpage
1316
Abstract
This paper presents the design and simulation results of a radiation tolerant configurable discrete time CMOS signal conditioning circuit for use with resistive sensors like strain gauge pressure sensors. The circuit is intended to be used for remote handling in harsh environments in the International Thermonuclear Experimental fusion Reactor (ITER) (experimental validation still needs to be performed). The design features a 5 V differential preamplifier using a Correlated Double Sampling (CDS) architecture at a sample rate of 20 kHz and a 24 V discrete time post amplifier. The gain is digitally controllable between 27 and 400 in the preamplifier and between 1 and 8 in the post amplifier. The nominal input referred noise voltage is only 8.5
while consuming only 1 mW. The circuit has a simulated radiation tolerance of more than 1 MGy.
Keywords
CMOS integrated circuits; Capacitors; Gain; Sensors; Threshold voltage; Transconductance; Transistors; Instrumentation amplifier; international experimental thermonuclear fusion reactor (ITER); radiation hardening; signal conditioning;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2012.2205269
Filename
6255779
Link To Document