• DocumentCode
    1255699
  • Title

    Design and Simulation of a MGy Radiation Tolerant Signal Conditioning Circuit for Resistive Sensors in 0.7 \\mu m CMOS

  • Author

    Leroux, P. ; Sterckx, J. ; Verbeeck, J. ; Van Uffelen, M. ; Damiani, C.

  • Author_Institution
    K. H. Kempen University College, Geel, Belgium
  • Volume
    59
  • Issue
    4
  • fYear
    2012
  • Firstpage
    1309
  • Lastpage
    1316
  • Abstract
    This paper presents the design and simulation results of a radiation tolerant configurable discrete time CMOS signal conditioning circuit for use with resistive sensors like strain gauge pressure sensors. The circuit is intended to be used for remote handling in harsh environments in the International Thermonuclear Experimental fusion Reactor (ITER) (experimental validation still needs to be performed). The design features a 5 V differential preamplifier using a Correlated Double Sampling (CDS) architecture at a sample rate of 20 kHz and a 24 V discrete time post amplifier. The gain is digitally controllable between 27 and 400 in the preamplifier and between 1 and 8 in the post amplifier. The nominal input referred noise voltage is only 8.5 \\mu {\\rm V}_{\\rm \\rms} while consuming only 1 mW. The circuit has a simulated radiation tolerance of more than 1 MGy.
  • Keywords
    CMOS integrated circuits; Capacitors; Gain; Sensors; Threshold voltage; Transconductance; Transistors; Instrumentation amplifier; international experimental thermonuclear fusion reactor (ITER); radiation hardening; signal conditioning;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2012.2205269
  • Filename
    6255779