• DocumentCode
    1256222
  • Title

    Proposal of a Spin Torque Majority Gate Logic

  • Author

    Nikonov, Dmitri E. ; Bourianoff, George I. ; Ghani, Tahir

  • Author_Institution
    Components Res., Intel Corp., Santa Clara, CA, USA
  • Volume
    32
  • Issue
    8
  • fYear
    2011
  • Firstpage
    1128
  • Lastpage
    1130
  • Abstract
    A spin-based logic device is proposed. It is comprised of a common free ferromagnetic layer and four discrete ferromagnetic nanopillars, each containing an independent fixed layer. It has the functionality of a majority gate and is switched via motion of domain walls by spin transfer torque. Validity of its logic operation and a quantitative performance prediction are demonstrated by micromagnetic simulation. It is entirely compatible with complimentary metal-oxide-semiconductor technology.
  • Keywords
    CMOS logic circuits; ferromagnetic materials; logic gates; magnetic domain walls; micromagnetics; complimentary metal-oxide-semiconductor technology; discrete ferromagnetic nanopillars; domain walls; ferromagnetic layer; independent fixed layer; logic operation; majority gate logic; micromagnetic simulation; spin transfer torque; spin-based logic device; Logic gates; Magnetic domain walls; Magnetic domains; Magnetic tunneling; Magnetization; Switches; Torque; Logic; majority gate; spin transfer torque; spintronics;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2011.2156379
  • Filename
    5928383