Transfer matrix of a Dirac-like singularity of the dielectric permittivity

Author

Boucher, Yann

Author_Institution

ENIB RESO-C.P., Brest, France

Volume

33

Issue

2

fYear

1997

fDate

2/1/1997 12:00:00 AM

Firstpage

265

Lastpage

268

Abstract

We derive the general expression, for TE-polarization, of the transfer matrix associated to a Dirac-like singularity of the dielectric permittivity. We show that this approach is successful in modeling quantum wells, as well as localized loss centers used for the “modal sculpturing” in semiconductor lasers. Its range of validity includes any discontinuity of finite length as long as its actual extension remains much inferior to the optical wavelength

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; optical susceptibility; permittivity; quantum well lasers; semiconductor device models; semiconductor heterojunctions; semiconductor lasers; semiconductor quantum wells; Dirac-like singularity; GaAs-AlGaAs; TE-polarization; dielectric permittivity; finite length discontinuity; localized loss centers; modal sculpturing; optical wavelength; quantum wells; semiconductor lasers; symmetrical quantum well; transfer matrix; Dielectrics; Electromagnetic propagation; Electromagnetic scattering; Genetic expression; Nonhomogeneous media; Optical films; Optical propagation; Partial differential equations; Permittivity; Symmetric matrices;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.552267

Filename

552267