• DocumentCode
    1256711
  • Title

    High power, 8.5 W CW, visible laser diodes

  • Author

    Welch, D.F. ; Scifres, D.R.

  • Author_Institution
    Spectra Diode Lab., San Jose, CA, USA
  • Volume
    27
  • Issue
    21
  • fYear
    1991
  • Firstpage
    1915
  • Lastpage
    1916
  • Abstract
    Visible laser diodes have been fabricated from AlGaInP operating at approximately 680 nm to high output powers. Broad area lasers with 100 mu m wide emitting apertures operate to greater than 1 W CW with a different efficiency of 38%. The threshold current densities of the material have been measured to be as low as 350 A/cm2 for lasers with 30% mirror reflectivities. Monolithic bars 8 mm long with 50 mu m emitting apertures periodically spaced on 500 mu m centres have been fabricated which operate to 8.5 W CW.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; semiconductor junction lasers; semiconductor laser arrays; 27 percent; 38 percent; 680 nm; 8.5 W; AlGaInP; broad area lasers; different efficiency; high power CW operation; monolithic bars; power conversion efficiency; threshold current densities; visible laser diodes;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19911189
  • Filename
    98845
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1256711