DocumentCode
1257530
Title
High gain wideband amplifier IC using 0.7 μm GaAs MESFET technology
Author
Kinoshita, T. ; Yamashita, K. ; Kotera, N. ; Maeda, M.
Author_Institution
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
Volume
24
Issue
2
fYear
1988
fDate
1/21/1988 12:00:00 AM
Firstpage
89
Lastpage
90
Abstract
A high gain wideband differential amplifier with a new circuit configuration is proposed and monolithically integrated by using 0.7 μm-gate GaAs MESFET IC technology. The fabricated IC exhibited gain of 16.7 dB and bandwidth of 3.2 GHz. A gain twice that of a conventional differential GaAs-MESFET amplifier was achieved with small bandwidth degradation
Keywords
III-V semiconductors; Schottky gate field effect transistors; differential amplifiers; field effect integrated circuits; gallium arsenide; linear integrated circuits; optical communication equipment; pulse amplifiers; wideband amplifiers; 0.7 micron; 16.7 dB; 3.2 GHz; GaAs; Gbit/s operation speed; III-V semiconductors; MESFET technology; broadband type; differential amplifier; digital transmission; high gain; monolithic type; optical communication equipment; submicron gate; wideband amplifier IC;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
Filename
5524
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