• DocumentCode
    1258964
  • Title

    Semicrystalline polymers with high dielectric constant, melting temperature, and charge-discharge efficiency

  • Author

    Zhang, Shihai ; Zou, Chen ; Kushner, Douglas Ian ; Zhou, Xin ; Orchard, Raymond J., Jr. ; Zhang, Nanyan ; Zhang, Q.M.

  • Author_Institution
    Strategic Polymer Sci., Inc., State College, PA, USA
  • Volume
    19
  • Issue
    4
  • fYear
    2012
  • fDate
    8/1/2012 12:00:00 AM
  • Firstpage
    1158
  • Lastpage
    1166
  • Abstract
    The dielectric properties of semicrystalline poly(tetrafluoroethylene-hexafluoropropylene-vinylidene fluoride) (THV) terpolymers with different compositions are investigated in a broad temperature range and under high voltage for potential applications in high energy density film capacitors with high thermal stability. It was found that the capacitor charge-discharge efficiency under high voltage (>;200 MV/m) and the melting temperature can be significantly improved by increasing the tetrafluoroethylene (TFE) content. Melting temperature above 220°C can be achieved in THV terpolymers with high TFE content. Although the THV terpolymers have lower dielectric constant than polyvinylidene fluoride (PVDF), their high melting temperature, low leakage current, and high charge-discharge efficiency represent significant advantages for capacitors operated under high charge-discharge repetition rate and at high ambient temperatures.
  • Keywords
    capacitors; leakage currents; permittivity; thermal stability; capacitor charge discharge efficiency; dielectric constant; high energy density film capacitors; leakage current; melting temperature; semicrystalline polymers; temperature 220 degC; tetrafluoroethylene; thermal stability; Capacitors; Dielectric constant; Films; Plastics; Temperature measurement; Thermal stability; Dielectric materials; capacitors; energy storage; polymers;
  • fLanguage
    English
  • Journal_Title
    Dielectrics and Electrical Insulation, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1070-9878
  • Type

    jour

  • DOI
    10.1109/TDEI.2012.6259984
  • Filename
    6259984