Lasing characteristics of GaInAsP-InP strained quantum-well microdisk injection lasers with diameter of 2-10 μm

Author

Baba, T. ; Fujita, P. ; Sakai, A. ; Kihara, M. ; Watanabe, R.

Author_Institution

Div. of Electr. & Comput. Eng., Yokohama Nat. Univ., Japan

Volume

9

Issue

7

fYear

1997

fDate

7/1/1997 12:00:00 AM

Firstpage

878

Lastpage

880

Abstract

We have obtained pulsed lasing operation in 2-5-μm diameter microdisk injection lasers using GaInAsP-InP compressively-strained multiple-quantum-well (MQW) wafers around room temperature. The effective cavity volume of the 2-μm-diameter device is the smallest among those for any type of electrically-pumped lasers. The threshold current of this device was as low as 0.2 mA. Cavity modes in emission spectra observed under CW conditions coincide well with theoretically predicted whispering gallery modes. Further reduction of diameter to less than 1.5 μm will realize the condition for spontaneous emission almost coupling into a single mode, which results in thresholdless lasing operation.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; laser modes; quantum well lasers; spontaneous emission; 0.2 mA; 2 to 10 mum; CW conditions; GaInAsP-InP; GaInAsP-InP compressively-strained multiple-quantum-well wafer; GaInAsP-InP strained quantum-well microdisk injection lasers; cavity modes; effective cavity volume; electrically-pumped lasers; emission spectra; pulsed lasing operation; spontaneous emission; threshold current; thresholdless lasing operation; whispering gallery modes; Laser modes; Laser theory; Optical pulses; Pulse compression methods; Quantum well devices; Quantum well lasers; Spontaneous emission; Temperature; Threshold current; Whispering gallery modes;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.593330

Filename

593330