• DocumentCode
    1259424
  • Title

    Thermal behavior of tensile-strain InGaAsP-InP lasers with varying ridgewidth

  • Author

    Huang, Ron ; Simmons, John G. ; Jessop, Paul E. ; Evans, John

  • Author_Institution
    Centre for Electrophotonic Mater. & Devices, McMaster Univ., Hamilton, Ont., Canada
  • Volume
    9
  • Issue
    7
  • fYear
    1997
  • fDate
    7/1/1997 12:00:00 AM
  • Firstpage
    889
  • Lastpage
    891
  • Abstract
    The thermal behavior of tensile-strain InGaAsP-InP laser diodes with varying ridgewidth is investigated experimentally. The temperature rise during continuous-wave (CW) operation was determined by comparing CW light-current (L-I) curves with short-pulsed (L-I) curves at different substrate temperatures. It is shown that the thermal impedance R depends strongly on the width w of the ridge and that this effect is different before and after threshold. In the first case, R decreases with increase of ln(w) and in the second case, R increases with increase of 1/w. However, the wider the ridge, the lower the CW maximum operating temperature because of the higher temperature dependence of dl/sub th/(T)/dT.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; quantum well lasers; thermal resistance; waveguide lasers; 110 to 400 K; CW light-current curves; CW maximum operating temperature; CW operation; InGaAsP-InP; MQW structure; ridgewidth dependence; short-pulsed light-current curves; substrate temperatures; temperature rise; tensile-strain InGaAsP-InP lasers; thermal behavior; thermal impedance; Diode lasers; Heating; Impedance; Laser modes; Quantum well devices; Quantum well lasers; Semiconductor lasers; Temperature; Threshold current; Waveguide lasers;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/68.593335
  • Filename
    593335